<html><head><style type="text/css"><!-- DIV {margin:0px;} --></style></head><body><div style="font-family:times new roman,new york,times,serif;font-size:12pt">Hi all<br>I am studying the defect induced level in Ionic semiconductor like TiO2 and ZnO. In this material the coupling between electron and phonon is very strong specially when a defect forms in these materials.<br>But by LDA and GGA normally we predict wrong defect level for them. I am in initial steps and Don't know whether the electron-phonon calculation help to predict and obtain correct defect level or not? I saw exampl07 is about electron-phonon coupling that at last prepare the lambda Vs. broadening , But I Don't know how to connect them to defect level? could anyone help me how can I use el-ph calculation to improve the levels?<br>thanks a lot<br><div> </div>Ali Kazempour<br>Physics department, Isfahan University of Technology<br>84156 Isfahan, Iran. Tel-1:
+98 311 391 3733<br>Fax: +98 311 391 2376 Tel-2: +98 311 391 2375<div><br></div></div><br>
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