[Pw_forum] charged defect in a unit cell

[Giuseppe Mattioli]

Dear Tram
I am afraid that your question cannot be answered in a short e-mail... I can 
suggest you to read at least one among many semiconductor physics books.
a quite simple, application oriented one is 

B. G. Streetman
Solid State electronic devices
Prentice-Hall International editions

But you can surely find plenty of alternatives...
HTH

Giuseppe  

On Monday 04 July 2011 08:16:30 Tram Bui wrote:
> Dear Giuseppe and Hongsheng,
>  Thank you very much for your information. The paper was a great source. I
> have read the paper couple times and also google here and there but there
> is something I don't quite understand is the shallow acceptor. I take the
> courage to ask you a little further into the paper. The authors mentioned
> of the case where they took Mg acceptor in GaN, and the term Ecorr was used
> (eq. 3) in the shallow centers. Can some one help me to understand what a
> shallow acceptor means? my guess was it is the energy level of the acceptor
> (Mg in GaN) if lower than the thermal energy-->shallow, if higher--->deep.
> Is that correct? I really appreciate your help.
>
> Great Respect,
> Tram
>
> On Sun, Jul 3, 2011 at 1:43 AM, Hongsheng Zhao 
<zhaohscas at yahoo.com.cn>wrote:
> > On 07/01/2011 05:19 PM, Giuseppe Mattioli wrote:
> > > Dear Tram Bui
> > > First, you may want to carefully read the following paper:
> > >
> > > Van de Walle, C. G.; Neugebauer, J. J. Appl. Phys. 95, 3851 (2004)
> >
> > Should be J. Appl. Phys. 95, 3851 (2004).
> >
> > Best
> > --
> > Hongsheng Zhao <zhaohscas at yahoo.com.cn>
> > School of Physics and Electrical Information Science,
> > Ningxia University, Yinchuan 750021, China
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> > Pw_forum mailing list
> > Pw_forum at pwscf.org
> > http://www.democritos.it/mailman/listinfo/pw_forum



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   Giuseppe Mattioli                            
   CNR - ISTITUTO DI STRUTTURA DELLA MATERIA   
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