[Pw_forum] How to do vc-relax in CP code?
程迎春
yccheng.nju at gmail.com
Thu May 7 16:31:36 CEST 2009
Dear all,
In the namelist of control, it seems that CP code can do a lot of
calculations(scf, nscf,relax,vc-relax,vc-cp,...). I have tested the
example18, which shows how to use cp.x to perform molecular dynamics
simulation of SiO2. The first step is to get the ground state of the
electronic system. I think there should be a previous step to get the
equilibrium structure of SiO2. However I find there isn't any examples to
do vc-relax using CP code. If I want to CP code to do vc-relax calculation,
how to set corresponding parameters? In PW code, the vc-relax calculation
is done in temperature=0 K condition which ignore the kinetic energy of
ions. But in CP code, the vc-relax calculation complains that the
temperature can not be 0 K. So I set the temperatures of ions and cell are
'not_controlled'. In the 'not_controlled' calculation, the cell of the
system expands with the increasing steps. It is strange. How to do vc-relax
in CP code? The following is the input file and some information from
output file.
input
&control
calculation='vc-relax',
restart_mode='from_scratch',
nstep=100,
iprint=1,
isave=1,
dt=8.0,
ndr=91,
ndw=92,
pseudo_dir='./',
outdir='./',
/
&system
ibrav=8,
celldm(1)=9.28990,
celldm(2)=1.73206,
celldm(3)=1.09955,
nat=18,
ntyp=2,
nbnd=48,
nelec=96,
nspin=1,
ecutwfc=20.0,
ecutrho=150.0,
nr1b=16,
nr2b=16,
nr3b=16,
qcutz=150.,
q2sigma=2.0,
ecfixed=16.0,
/
&electrons
electron_dynamics='verlet',
ortho_max=100,
emass=700.,
emass_cutoff=3.,
/
&ions
ion_dynamics='verlet',
ion_radius(1)=1.0,
ion_radius(2)=1.0,
/
&cell
cell_dynamics='pr',
press=0.D0
/
ATOMIC_SPECIES
O 16.00 O.pz-rrkjus.UPF
Si 28.00 Si.vbc.UPF
ATOMIC_POSITIONS
O 3.18829368 14.83237039 1.22882961
O 7.83231469 6.78704039 1.22882961
O 2.07443467 5.99537992 4.73758250
O 6.72031366 14.04231898 4.73758250
O 3.96307134 11.26989826 7.87860582
O 8.60802134 3.22295920 7.87860582
O 3.96307134 4.81915267 9.14625133
O 8.60802134 12.86448267 9.14625133
O 3.18736469 1.25668055 5.58029607
O 7.83324368 9.30201055 5.58029607
O 2.07536366 10.09206195 2.07358613
O 6.71938467 2.04673195 2.07358613
Si 0.28891589 8.04533000 3.40456284
Si 4.93386589 0.00000000 3.40456284
Si 2.13389003 12.27717358 -0.04188031
Si 6.77884003 4.23184358 -0.04188031
Si 2.13389003 3.81348642 6.85202747
Si 6.77884003 11.85881642 6.85202747
some information form output file
step 1
CELL_PARAMETERS
9.28990000 0.00000000 0.00000000
0.00000000 16.09066419 0.00000000
0.00000000 0.00000000 10.21470954
Total stress (GPa)
1582.97951906 -1.16929980 -21.68011687
-1.17872209 1618.59651136 11.14345397
-21.82861949 11.00777251 1647.98672617
step 50
CELL_PARAMETERS
16.77885645 -0.00946391 0.01423662
-0.01456595 21.79804238 -0.00448412
0.01470088 -0.00304592 17.53521234
Total stress (GPa)
-11.78865891 0.58606252 1.97796694
0.58606252 95.04276174 -4.47537576
1.97796694 -4.47537576 7.30569481
step 100
CELL_PARAMETERS
26.25499658 -0.05592615 0.05092035
-0.07610163 31.84643730 0.00083894
0.05276954 0.00223134 27.45646153
Total stress (GPa)
-21.80901098 0.11600975 -0.06986058
0.11600975 -1.12040472 0.25103238
-0.06986058 0.25103238 -19.41116556
--
Y. C. Cheng
Department of Physics
Nanjing University
Nanjing 210093
P. R. China
Tel: 86-25-83592907
Email: yccheng.nju at gmail.com
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